Semiconductor & Electronics

Focus Areas

Key process windows

Photoresist 100 nm – 10 µm — pattern accuracy and yield.

SiO₂ / Si₃N₄ 10 nm – 1 µm — gate oxide & ILD performance.

PI / UV 5 – 50 µm — FPC flexibility and reliability.

Metrology Table

Sub-scenario / Process	Film Layer	Thickness Range	Application & Metrology Value
Photolithography	Photoresist	100 nm – 10 µm	Controls lithography pattern accuracy and impacts chip yield
Insulation / Passivation	Dielectric films (SiO₂, Si₃N₄)	10 nm – 1 µm	Gate oxide layer, interlayer dielectric; determines electrical performance of devices
Flexible Circuit Protection	Polyimide (PI) / UV coating	5 µm – 50 µm	FPC insulating protective layer; thickness affects flexibility and reliability

Photolithography

Photoresist · 100 nm – 10 µm

Controls lithography pattern accuracy and impacts chip yield

Insulation / Passivation

Dielectric films (SiO₂, Si₃N₄) · 10 nm – 1 µm

Gate oxide layer, interlayer dielectric; determines electrical performance of devices

Flexible Circuit Protection

Polyimide (PI) / UV coating · 5 µm – 50 µm

FPC insulating protective layer; thickness affects flexibility and reliability

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