Wet / semi-dry / dry films 10 nm – 1 µm — closed-loop inline metrology.
Buffers 10–100 nm · TCO 200 nm – 1 µm — efficiency-critical layers.
Multi-layer stacks for Voc, absorption and yield.
| Sub-scenario / Process | Film Layer | Thickness Range | Application & Metrology Value |
|---|---|---|---|
| Interface Transport Layer | Buffer layers (NiOx, SnO₂, TiO₂, C60) | 10 nm – 100 nm | Carrier transport efficiency; thickness deviation impacts device performance |
| Light Absorption Layer | Silicon thin films (a-Si, µc-Si) | 100 nm – 3 µm | Controls spectral absorption across wavelength bands |
| Functional Layer | Perovskite wet / semi-dry / dry films | 10 nm – 1 µm | Full-stack metrology for in-line monitoring and closed-loop feedback |
| Transparent Electrode | TCO (FTO, ITO, IWO) | 200 nm – 1 µm | Affects transmittance and conductivity — key efficiency parameters |
| CdTe Solar Cells | Full stack: CdS / CdTe / back contact | 10 nm – 8 µm | Full-stack thickness control impacts Voc and conversion efficiency |
| CIGS Solar Cells | Mo / CIGS / CdS / ZnO:Al | 30 nm – 2.5 µm | Each layer critical for absorption, transport and efficiency |
Carrier transport efficiency; thickness deviation impacts device performance
Controls spectral absorption across wavelength bands
Full-stack metrology for in-line monitoring and closed-loop feedback
Affects transmittance and conductivity — key efficiency parameters
Full-stack thickness control impacts Voc and conversion efficiency
Each layer critical for absorption, transport and efficiency
